In simple terms, FETs can be thought as high-speed switches, composed of two metal electrodes and a semiconducting channel in between. Electrons (or holes) move from the source electrode to the drain electrode, flowing through the channel. While 3D FETs have been scaled down to nanoscale dimensions successfully, their physical limitations are starting to emerge. Short semiconductor channel lengths lead to a decrease in performance: some electrons (or holes) are able to flow between the electrodes even when they should not, causing heat and efficiency reduction. To overcome this performance degradation, transistor channels have to be made with nanometer-scale thin materials. However, even thin 3D materials are not good enough, as unpaired electrons, part of the so-called "dangling bonds" at the surface interfere with the flowing electrons, leading to scattering. Passing from thin 3D FETs to 2D FETs can overcome these problems and bring in new attractive properties. &quo