In simple terms, FETs can be thought as high-speed switches, composed of two metal electrodes and a semiconducting channel in between. Electrons (or holes) move from the source electrode to the drain electrode, flowing through the channel. While 3D FETs have been scaled down to nanoscale dimensions successfully, their physical limitations are starting to emerge. Short semiconductor channel lengths lead to a decrease in performance: some electrons (or holes) are able to flow between the electrodes even when they should not, causing heat and efficiency reduction. To overcome this performance degradation, transistor channels have to be made with nanometer-scale thin materials. However, even thin 3D materials are not good enough, as unpaired electrons, part of the so-called "dangling bonds" at the surface interfere with the flowing electrons, leading to scattering. Passing from thin 3D FETs to 2D FETs can overcome these problems and bring in new attractive properties. &quo
A key step in unlocking the potential for greener, faster, smaller electronic circuitry was taken recently by a group of researchers led by UAlberta physicist Robert Wolkow. The research team found a way to delete and replace out-of-place atoms that had been preventing new revolutionary circuitry designs from working. This unleashes a new kind of silicon chips for used in common electronic products, such as our phones and computers. "For the first time, we can unleash the powerful properties inherent to the atomic scale," explained Wolkow, noting that printing errors on silicon chips are inevitable when working at the atomic scale. "We were making things that were close to perfect but not quite there. Now that we have the ability to make corrections, we can ensure perfect patterns, and that makes the circuits work. It is this new ability to edit at the atom scale that makes all the difference." Think of a typing mistake and the ability to go back and white